digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108 mcr25d, mcr25m, MCR25N silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +125c, sine wave, 50 to 60hz) mcr25d mcr25m MCR25N v drm v rrm 400 600 800 v on-state rms current (180 conduction angles, t c = 80c) i t(rms) 25 a peak non-repetitive surge current (half-cycle, sine wave, 60hz, t j = 125c) i tsm 300 a circuit fusing consideration (t = 8.3ms) i 2 t 373 a 2 s forward peak gate power (pulse width 1.0s, t c = 80c) p gm 20 w forward average gate power (t = 8.3ms, t c = 80c) p g(av) 0.5 w forward peak gate current (pulse width 1.0s, t c = 80c) i gm 2.0 a operating junction temperature range t j -40 to +125 c storage temperature range t stg -40 to +150 c note 1: v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; positive gate voltage sh all not be applied concurrent with negative potential on the anode. blocking voltages sh all not be tested with a co nstant current source such that the voltage ratings of the devices are exceeded. thermal characteristics characteristic symbol maximum unit thermal resistance, junction to case r ? jc 1.5 c/w thermal resistance, junction to ambient r ? ja 62.5 c/w lead solder temperature (lead length 1/8? from case, 10s max) t l 260 c electrical characteristics (t j = 25c, unless otherwise noted) characteristic symbol min typ max unit off characteristics start here peak forward or reverse blocking current (v ak = rated v drm or v rrm , gate open) t j = 25c t j = 125c i drm, i rrm - - - - 0.01 2.0 ma on characteristics peak forward on-state voltage * (i tm = 50a) v tm - - 1.8 v gate trigger current (continuous dc) (v d = 12v, r l = 100 ? ) i gt 4.0 12 30 ma gate trigger voltage (continuous dc) (v d = 12v, r l = 100 ? ) v gt 0.5 0.67 1.0 v holding current (v d = 12v, gate open, initiating current = 200ma) i h 5.0 13 40 ma latching current (v d = 12v, i g = 30ma) i l - 35 80 ma dynamic characteristics critical rate of rise of off-state voltage (v d = 67% of rated v drm , exponential waveform, gate open, t j = 125c) dv/dt 100 250 - v/s critical rate of rise of on-state current (i pk = 50a, pw = 30sec, di g /dt = 1a/sec, i gt = 50ma) di/dt - - 50 a/s * pulse width 2.0ms, duty cycle 2%.
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr25d, mcr25m, MCR25N silicon controlled rectifiers mechanical characteristics case to-220ab marking alpha-numeric pin out see below fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr25d, mcr25m, MCR25N silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 mcr25d, mcr25m, MCR25N silicon controlled rectifiers fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com rev. 20130108
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